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Thickness Monitor FE-300

A film thickness measurement system based on the high precision spectrophotometry features compact size and affordable price. Every necessary component is built in one body for stable measurement data. Although offered at affordable price there is no compromise on accuracy and even optical constant analysis is possible.

Product

Feature
  • Wide film thickness range (1nm~1mm)
  • Thickness measurement using reflection spectrum
  • Compact and affordable without compromising high precision
  • User friendly software interface.
  • Analytical algorisms are Peak-Valley Method, Fast Fourier Transformation (FFT) Method, Non-linear Least-Squares Method and Optimization Method.
  • Optical constant analysis (n: Refractive index, k: Extinction coefficient) with Non-linear Least-Squares Method

 

Measure Item
  • Absolute reflectance
  • Film thickness(Up to 10 layers)
  • Optical constant(n: Refractive index, k: Extinction coefficient)

 

Application
  • Function film, Plastic
    Transparent film(ITO, Silver nanowire) Retardation film, Polarization film, AR film, PET, PEN, TAC, PP, PC, PE, PVA, Adhesive, Protect film, Hard coat
  • Semiconductor, Compound semiconductor
    Si, oxide film, nitride film, Resist, SiC, GaAs, GaN, InP, InGaAs, Leadframe, SOI, Sapphire
  • Surface treatment
    DLC, Anti-rust, Anti-fog additive
  • Optical materia
    Filter, AR coating
  • FPD
    LCD(CF, ITO, LC, PI, PS), OLED
  • Others
    HDD, Magnetic tape, Construction material

 

Principle

Principle

Otsuka Electronics provides non-contact and non-destructive thickness measurements with high accuracy using light interference method and own high performance spectrometer. Light interference method is the optical thickness analysis technique using the reflectance in the spectrophotometer optics. Given an example of the coated film on metal substrate, the beam irradiated from above reflects on the coating surface (R1).Also, transmitted beam reflects on the substrate or boundaries (R2). From the light interference behavior caused by optical path difference and phase shift, film thickness can be calculated using reflectance spectrum and refractive index. Analytical algorisms are Peak-Valley Method, Fast Fourier Transformation (FFT) Method, Non-linear Least-Squares Method and Optimization Method.

 

Specification

Specification
Model FE-300V FE-300UV FE-300NIR*1
General Standard Thin film Thick film Thick film
 (High resolution)
Sample size Maximum 8 inch wafer (5mm thickness)
Thickness range
 (nd)
100nm~40μm 10nm~20μm 3μm~300μm 15μm~1.5mm
Wavelength range 450nm~780nm 300nm~800nm 900nm~1600nm 1470nm~1600nm
Accuracy ±0.2nm*2 ±0.2nm*2 - -
Repeatability 0.1nm*3 0.1nm*3 - -
Measure time 0.1s~10s
Spot size Approx φ3mm
Light source I2 D2 + I2 I2 I2
Interface USB
Size, Weight 280(W)×570(D)×350(H)mm, Approx.24kg
Software
Standard Peak-valley method, FFT analysis, Optimization,
Non-linear least square method
Optional Material analysis software, Post analysis software,
Recipe create , Reference plate

*1 Ask for detail
*2 To guaranteed value of VLSI thickness standard(100nm SiO2/Si)

 

Configuration

Configuration / Optics

 

Software

Measure Menu

 

Analysis Condition Setting Menu

 

Measured Data

SiO2 SiN Thickness Measurement --- Application Sheet FE0002

The semiconductor transistor transmits signals by controlling the current conduction state. There is a built-in insulation film in between the transistors to prevent the current leakage and to avoid the accidental current inflow from another transistor. The insulation film is made of SiO2 or SiN. SiN has higher dielectric constant than SiO2 and can be used as a stopper to remove unnecessary SiO2 in CMP. To assess the efficiency as an insulation film and to keep the precise process management, it is mandatory to make a measurement of these film thicknesses.

 

 

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