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Spectrum Ellipsometer
FE-5000 series

Automatic angle adjusting mechanism in addition to the basic spectrum ellipsometry system enables high accurate film thickness measurement for variety of thicknesses. Detachable retarder and rotating analyzer also widens the scope of choices available to measure as well as improves the measurement accuracy.
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Measurement Targets
  • Semiconductor wafer
  • Compound semiconductor
  • FPD （flat panel display）
  • New materials
  • Optical thin films
  • Lithography
Measurement Items
  • Ellipso-parameters
  • Optical constant analysis
  • Thickness analysis
Features
  • Ellipsometry measurement for both visible and ultraviolet-ray range (250 to 800nm)
  • Nano-order thin film thickness
  • Quick measurement using multi channel spectroscopy (over 400 ch)
  • Angle adjustable mechanism for detailed analysis
  • High operability with optical constant database and recipe registration function
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Film Thickness Measurement Instrument About the Spectrum Ellipsometer
FE-5000 series

Automatic angle adjusting mechanism in addition to the basic spectrum ellipsometry system enables high accurate film thickness measurement for variety of thicknesses. Detachable retarder and rotating analyzer also widens the scope of choices available to measure as well as improves the measurement accuracy.

Measurement Items

Ellipso-parameters

(tanψ、cosΔ)

Optical constant analysis

(n : reflactive index , k : extinction coefficient )

Thickness analysis

Measurement Targets

Semiconductor wafer

  • Gate oxide thin filmnitride filmSiO2SixOySiNSiONSiNxAl2O3SiNxOypoly-SiZnSeBPSGTiNOptical constant of resist at each wavelength

Compound semiconductor

  • AlxGa (1-x) As multilayer filmamorphous silicon

FPD （flat panel display）

  • Oriented filmITOMgO for plasma display

New materials

  • DLC(Diamond Like Carbon)superconducting thin filmmagnetic head thin film

Optical thin films

  • TiO2SiO2multilayer filmantireflection filmreflection film

Lithography

  • Optical constant for g ray(436 nm)h ray(405 nm)i ray(365 nm)KrF(248 nm)Optical constant of resist at each wavelength

Principle

Ellipsometry measures change of polarization upon reflection light (elliptically polarized) when linear polarized light is irradiated to the sample. As s and p wave changes its phases and reflection amplitudes individually depending on the sample, amplitude ratio “tanψ” and phase difference “cosΔ” which quantify the polarization change can be obtained .

Principle

tanψ, cosΔ is called “Ellipso-parameter” and the spectrum of these are measured in Spectrum Ellipsometry.

Specifications

Model FE-5000 series

Principle

 Rotating analyzer method*1
Thickness range (nd) 0.1 nm to 1 μm
Irradiate(reflect) angle 45 to 90°
Irradiate(reflect) angle drive method Automatic sine- bar drive
tanψ accuracy < ±0.01
cosΔ accuracy < ±0.01
Reproducibility

< 0.01% *2

Wavelength range*3

300 to 800 nm
Light source High stability xenon lamp
Stage drive Manual / Auto


  1. *1　Rotating polarizer, detachable retarder
  2. *2　Measured in VLSI standard Sio 2 (100nm)
  3. *3　Measurable range

System Configuration

Optical configuration

Optical configuration

Measurement Examples

ITO Structure Analysis using Gradient Model --- Application note FE0006

ITO (indium-tin-oxide) is the transparent electrode material that is used for flat display like a LCD display. The electrical conductivity and color hue of ITO are improved by annealing treatment (heat treatment) after its film formation. At that time, the oxygen state and the crystalline state of ITO will change. This change tends to gain the slope change in stages with respect to film thickness and it does not become a single layer with uniform composition optically. We’d like to introduce a case of the measurement of degree of inclination of both upper and lower surface’s nk with using the gradient model.

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