Si Wafer Thickness Monitoring System
SF-3

Real-time measurement of Si wafer thickness at CMP or BG

Measurement Targets

Thickness measurement for Si wafer material
Grinding evaluation for silicon/ compound semiconductor
1.3 mm / next generation 450 mm wafer
775 ㎛ 300 mm wafer
TSV wafer (Si layer thickness measurement on via)
Other materials (SiO₂, film)

Measurement Items

Film thickness analysis (5 layers)

Features

Non contact, non destructive measurement
Parameter setting after spectrum analysis
High speed real-time monitoring during CMP, BG
Measurement over interlayer such as protection film and window material
Multi layers analysis
Original analytical engine (Patent pending)
Original analytical algorism for thickness measurement (Patented)
Automatic mapping function for thickness distribution

About the
SF-3
Measurement Items
Measurement Targets
Specifications
System Configuration

Film Thickness Measurement Instrument About the Si Wafer Thickness Monitoring System SF-3

Real-time measurement of Si wafer thickness at CMP or BG

Measurement Items

Film thickness analysis

(5 layers)

Measurement Targets

Grinding evaluation for silicon/ compound semiconductor1.3 mm / next generation 450 mm wafer775 ㎛ 300 mm waferTSV wafer (Si layer thickness measurement on via)Other materials (SiO₂, film)

Specifications

Model	SF-3/200	SF-3/300	SF-3/1300
Silicon Measurement Thickness Range	6 to 400 μm	10 to 775 μm	50 to 1300 μm
Resin Measurement Thickness Range	10 to 1000 μm	20 to 1500 μm	100 to 2600 μm
Minimum Sampling Period	5 kHz (200 μsec)
Repeatability	less than ±0.01 %^*1
Measurement Size	Over about Φ20 μm^*2
Measurement Distance	50 mm, 80 mm, 120 mm, 150 mm, 200 mm
Light source	Semiconductor light source (laser class 3B product)
Analysis Method	FFT analysis, optimization method^*3
Interface	LAN, I/O input/output terminal
Power supply	DC 24 V specification, (AC power supply unit sold separately)
Dimensions (W × D × H)	123 × 224 × 128 mm

＊1:The standard relative deviation of our standard sample AirGap
(approximately 300 μm and about 1000 μm) at time of measurement (n=20).
＊2:Design value at time of WD 50 mm probe specification
＊3:Used when measuring thinned wafers
＊CE acquired products are SF-3/300, SF-3/1300

System Configuration

List of Products

Support

Contact

Please feel free to contact us with any inquiries or requests.

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