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Si Wafer Thickness Monitoring System SF-3

Real-time measurement of Si wafer thickness at CMP or BG


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  • Non contact, non destructive measurement
  • Parameter setting after spectrum analysis
  • High speed real-time monitoring during CMP, BG
  • Measurement over interlayer such as protection film and window material
  • Multi layers analysis
  • Original analytical engine (Patent pending)
  • Original analytical algorism for thickness measurement (Patented)
  • Automatic mapping function for thickness distribution


Measurement item
  • Film thickness analysis (5 layers)


  • Thickness measurement for Si wafer material
  • Grinding evaluation for silicon/ compound semiconductor
  • 1.3mm/ next generation 450mm wafer
  • 775㎛ 300mm wafer
  • TSV wafer (Si layer thickness measurement on via)
  • Other materials (SiO2, film)


Model SF-3/200 SF-3/300 SF-3/1300
Silicon Measurement Thickness Range 6~400μm 10~775μm 50~1300μm
Resin Measurement Thickness Range 10~1000μm 20~1500μm 100~2600μm
Minimum Sampling Period 5kHz(200μsec)
Repeatability less than ±0.01%*1
Measurement Size Over about Φ20μm*2
Measurement Distance 50mm,80mm,120mm,150mm,200mm
Light source Semiconductor light source (laser class 3B product)
Analysis Method FFT analysis, optimization method*3
Interface LAN, I/O input/output terminal
Power supply DC 24 V specification, (AC power supply unit sold separately)
Size W123×D224×H128mm
Optional Item 123(W)×224(D)×128(H)mm

*1:The standard relative deviation of our standard sample AirGap
      (approximately 300 μm and about 1000 μm) at time of measurement (n=20).
*2:Design value at time of WD 50 mm probe specification
*3:Used when measuring thinned wafers
*CE acquired products are SF-3/300, SF-3/1300




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