Thickness Monitor FE-300
A film thickness measurement system based on the high precision spectrophotometry features compact size and affordable price. Every necessary component is built in one body for stable measurement data. Although offered at affordable price there is no compromise on accuracy and even optical constant analysis is possible.
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- Measured Data
- Wide film thickness range （1nm～1mm)
- Thickness measurement using reflection spectrum
- Compact and affordable without compromising high precision
- User friendly software interface.
- Analytical algorisms are Peak-Valley Method, Fast Fourier Transformation (FFT) Method, Non-linear Least-Squares Method and Optimization Method.
- Optical constant analysis (n: Refractive index, k: Extinction coefficient) with Non-linear Least-Squares Method
- Absolute reflectance
- Film thickness(Up to 10 layers)
- Optical constant(n: Refractive index, k: Extinction coefficient)
- Function film, Plastic
Transparent film（ITO, Silver nanowire） Retardation film, Polarization film, AR film, PET, PEN, TAC, PP, PC, PE, PVA, Adhesive, Protect film, Hard coat
- Semiconductor, Compound semiconductor
Si, oxide film, nitride film, Resist, SiC, GaAs, GaN, InP, InGaAs, Leadframe, SOI, Sapphire
- Surface treatment
DLC, Anti-rust, Anti-fog additive
- Optical materia
Filter, AR coating
LCD（CF, ITO, LC, PI, PS）, OLED
HDD, Magnetic tape, Construction material
Otsuka Electronics provides non-contact and non-destructive thickness measurements with high accuracy using light interference method and own high performance spectrometer. Light interference method is the optical thickness analysis technique using the reflectance in the spectrophotometer optics. Given an example of the coated film on metal substrate, the beam irradiated from above reflects on the coating surface (R1).Also, transmitted beam reflects on the substrate or boundaries (R2). From the light interference behavior caused by optical path difference and phase shift, film thickness can be calculated using reflectance spectrum and refractive index. Analytical algorisms are Peak-Valley Method, Fast Fourier Transformation (FFT) Method, Non-linear Least-Squares Method and Optimization Method.
|General||Standard||Thin film||Thick film||Thick film
|Sample size||Maximum 8 inch wafer (5mm thickness)|
|Spot size||Approx φ3mm|
|Light source||I2||D2 + I2||I2||I2|
|Size, Weight||280（W)×570（D)×350（H）mm, Approx.24kg|
|Standard||Peak-valley method, FFT analysis, Optimization,
Non-linear least square method
|Optional||Material analysis software, Post analysis software,
Recipe create , Reference plate
*1 Ask for detail
*2 To guaranteed value of VLSI thickness standard(100nm SiO2/Si)
Analysis Condition Setting Menu
The semiconductor transistor transmits signals by controlling the current conduction state. There is a built-in insulation film in between the transistors to prevent the current leakage and to avoid the accidental current inflow from another transistor. The insulation film is made of SiO2 or SiN. SiN has higher dielectric constant than SiO2 and can be used as a stopper to remove unnecessary SiO2 in CMP. To assess the efficiency as an insulation film and to keep the precise process management, it is mandatory to make a measurement of these film thicknesses.
- Measured Data
|Thickness Monitor FE-3000|
|Array Spectrometer MCPD-9800|