Medical	Medical
Analytical	Zeta Potential Particle Size Molecular Weight Capillary Electrophoresis Spherulite diam./Corr. Length
Spectrometry	Spectrometer Thickness Measurement Light Measurement FPD Evaluation Material Evaluation In-Process Evaluation

Medical

Medical
Analytical

Zeta Potential

Particle Size

Molecular Weight

Capillary Electrophoresis

Spherulite diam./Corr. Length
Spectrometry
Spectrometer

Thickness Measurement
- Thickness Monitor
- Thickness Monitor FE-300
- Spectrum Ellipsometer FE-5000/5000S
- Built-in film thickness monitor　FE-3
- Optical Thickness Meter OPTM series
- Line-Scan Thickness Monitor ™ (In-line type)
- Line-Scan Thickness Monitor ™ (Off-line type)
- Si Wafer Thickness Monitor
- Si Wafer Thickness Monitoring System　SF-3
Light Measurement

FPD Evaluation

Material Evaluation

In-Process Evaluation
List of Product
Discontinued Products

Spectrum Ellipsometer FE-5000/5000S

Automatic angle adjusting mechanism in addition to the basic spectrum ellipsometry system enables high accurate film thickness measurement for variety of thicknesses. Detachable retarder and rotating analyzer also widens the scope of choices available to measure as well as improves the measurement accuracy.

Are you interested in alliance or distributorship for this product?

Product
Principle
Specification
Configuration
Measured Data

Product

Features

Ellipsometry measurement for both visible and ultraviolet-ray range (250-800nm)
Nano-order thin film thickness
Quick measurement using multi channel spectroscopy (over 400ch)
Angle adjustable mechanism for detailed analysis
High operability with optical constant database and recipe registration function
Optical constant measurement using multi layer fitting analysis for quality control of film thickness and film property

Measurement items

Ellipso-parameters (tanψ、cosΔ)
Optical constant analysis (n : reflactive index , k : extinction coefficient )
Thickness analysis

Application

Semiconductor wafer
Gate oxide thin film, nitride film
SiO₂，SixOy，SiN，SiON，SiNx，Al₂O₃，SiN_xO_y，poly-Si，ZnSe， BPSG，TiN
Optical constant of resist at each wavelength
Compound semiconductor
AlxGa(1-x)As multilayer film，amorphous silicon
FPD （flat panel display）
Oriented film
ITO, MgO for plasma display
New materials
DLC(Diamond Like Carbon)，superconducting thin film，magnetic head thin film
Optical thin films
TiO₂，SiO₂，multilayer film，antireflection film，reflection film
Lithography
Optical constant for g ray(436nm)，h ray(405nm)，i ray(365nm)，KrF(248nm)
Optical constant of resist at each wavelength

Principle

Ellipsometry measures change of polarization upon reflection light (elliptically polarized) when linear polarized light is irradiated to the sample. As s and p wave changes its phases and reflection amplitudes individually depending on the sample, amplitude ratio “tanψ” and phase difference “cosΔ” which quantify the polarization change can be obtained .

tanψ, cosΔ is called “Ellipso-parameter” and the spectrum of these are measured in Spectrum Ellipsometry.

Specification

Model	FE-5000S	FE-5000
Measurement sample	Reflective sample
Sample size	100x100mm	100x100mm
Principle	Rotating analyzer method ^*1
Thickness range (nd)	0.1nm～
Irradiate(reflect) angle	45～90°	45～90°
Irradiate(reflect) angle drive method	Automatic sine- bar drive
Spot size^*2	Approx.φ2.0	Approx.φ1.2^*3
tanψ accuracy	< ±0.01
cosΔ accuracy	< ±0.01
Reproducibility	< 0.01% ^*4
Wavelength range^*5	300～800nm	250～800nm
Detector	Polychrometer （PDA, CCD）
Light source	High stability xenon lamp ^*6
Stage drive	Manual	Manual/Auto
Loader	NG	OK
Size, weight	650（W)×400（D)×560（H）mm Approx. 50kg	1300（W)×900（D)×1750（H）mm Approx. 350kg^*7
Software
Analysis	Least squares thin film analysis（Reflective index model function、Cauchy dispersion model、nk-Cauchy dispersion model） Theoretical analysis(Bulk surface analysis (n.k.), simultaneous analysis of Angle-dependance

*1　Rotating polarizer, detachable retarder
*2　Vary by measuring condition
*3　Microspot available (optional)
*4　Measured in VLSI standard Sio 2 (100nm)
*5　Measurable range
*6　Vary depends on the measuring wavelength
*7　automatic stage

Configuration

Optical configuration

Measured Data

ITO Structure Analysis using Gradient Model --- Application note FE0006

ITO (indium-tin-oxide) is the transparent electrode material that is used for flat display like a LCD display. The electrical conductivity and color hue of ITO are improved by annealing treatment (heat treatment) after its film formation. At that time, the oxygen state and the crystalline state of ITO will change. This change tends to gain the slope change in stages with respect to film thickness and it does not become a single layer with uniform composition optically. We’d like to introduce a case of the measurement of degree of inclination of both upper and lower surface’s nk with using the gradient model.

Sample, Device/Specification

DATA

Product
Principle
Specification
Configuration
Measured Data